Emitters & Detectors
Silicon photodiode TO-46 spectral response between 330 and 720nm
Photodiode; 400 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 180 pF (Typ.); -20 deg
Photoconductive Cell, Hermetically Sealed, TO-8
Sensor, Opto Switch Assembly, Transmissive, Single Channel, 5.1mm, 30V, 50mA
Diode, Infrared Emitter; Side Looking; 880 nm; 1.7 V; 20 mA; -40 degC; 85 degC
Detector; NDIR Gas Sensing; Dual AnalogOutput; TO-5; HC; Leads
Detector, Phototransistor; T-1; NPN; 20deg; 30 V; 0.4 V; 12 mA (Min.); 100 nA
PhotoDiode; Pill Style Metal Can; PN; 48 deg; 7 uA (Min.); 20 nA; 125 mW; -55
Detector, Phototransistor; TO-46; NPN; 90/18 deg; 30 V (Min.); 0.4 V (Max.)
Phototransistor; TO-46; NPN; 30 V; 0.4 V; 16 mA (Min.); 100 nA; 150 mW; -55 deg
Diode, Infrared Emitter; TO-46 Metal Can; 880 nm; 1.9 V; 100 mA; -55 degC; 125
Sensor, Slot Dark-On, T-Shape, Through Beam, NPN, 5 to 24VDC, 5mm, 35 mA
Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC
TC SLOT PMS PNP D-ON L SHAPE
PHOTO TRANSISTOR PLASTIC T-1
Photocell; 600 Kilohms (Min.); 550 nm; 250 Vpeak (Max.); 500 mW @ 25 degC; TO-
SENS OPTO SLOT 3.18MM TRANS C-MT
PHOTOTRANS. W/BASE-EMITTER RES.
Detector, Thermopile TO-5 0.7 mm x 0.7 mm 35 V/W 2.5 mm
Photo Diode; Peak Reflow Compatible (260 C)
Photodiode; 0.16 mA (Typ.); 0.45 V (Typ.); 0.02 uA (Typ.); 0.5 nF (Typ.); 0.2
Silicon photodiode; 6mm ceramic; IR blocking; blue enhanced; wide field of view
880 nm IRED. T-1 ¾ (5mm); 20 mW output power; Narrow beam angle of ±10°
Silicon photodiode; ceramic; plastic molded lens; fast response; low dark current
Silicon photodiode; three lead TO-8 hermetic; flat window; UV enhanced; wide FOV
Silicon photodiode; long T1 package; fastresponse; dark current; intermediate FOV
Opto SFH 203 P IR + Visible Light Si Photodiode, 75 deg, Thru Hole 5mm package
Opto SFH 229 Full Spectrum Si Photodiode, 17 deg, Through Hole 3mm package
Photoconductive Cell, Hermetically Sealed, TO-18
Photoconductive Cell, Plastic Encapsulated Ceramic Pkg, TO-5
CDS/CDSE PHOTOCONDUCTIVE CELLS, HERMETICALLY SEALED PKG, TO-5
Photocell; 100 Kilohms (Min.); 550 nm; 170 Vpeak (Max.); 500 mW @ 25 degC; TO-
Photoconductive Cell, Hermetically Sealed, TO-18
Photodiode, Planar; Clear Epoxy Dome Package; 180 muA (Typ.); 0.40 V (Typ.); 2.0
Photocell, Hermetically Packaged
Photoconductive Cell; 34 Kilohms (Typ.); 500 Kilohms (Min.); 0.80 (Typ.)
HI POWER OUTMED SPEEDTO-46 FLAT LENS
Thermopile Detector; 75 Kilohms (Typ.); TPS 333 Series
Optoelectronics, Detector; Pyroelectric Dual Element for Intrusion Alarm; TO-5
TSFF5210 IR LED, 870nm, T-1 3/4 (5mm) Through Hole package
Detector, Phototransistor; Side-LookingPlastic; NPN; 50 deg; 30 V; 0.4 V; 100
Photoconductive Cell; 1 Megohms (Min.); 0.90 (Typ.); 100 Vpeak (Max.); 40 V
Detector, PhotoDarlington; Compact Metal Can Coaxial; NPN; 24 deg; 15 V; 1.1 V
Photoconductive Cell; 1 Megohms (Min.); 0.90 (Typ.); 100 Vpeak (Max.); -40 degC
Detector, PhotoDarlington; Side-LookingPlastic; 50 deg; 15 V; 1.1 V; 1 mA (Min
Pyroelectric Infrared Detectors - Single and Dual Channel Detectors
Detector; T-1; NPN; 20 deg; 15 V; 1.1 V; 0.5 mA (Min.); 250 nA; 70 mW; -40 deg
TEKT5400S +/-37deg Day Light Phototransistor, Thru Hole 2-Pin Side Looker package
Phototransistor, 2 Elements, 18deg, BPX82
EMITTER IR 890NM 50MA RADIAL
3 CHANNEL OPTICAL COMPARATOR,
Opto SFH 206 K IR + Visible Light Si Photodiode, 60 deg, Thru Hole 5mm package
BPX 38-2/3 80 IR+Visible Light Phototransistor, Through Hole 3-Pin TO-18 package
SLOTTED OPTICAL SWITCHPHOTOLOGIC
Detector, Thermopile TO-5 1.2 mm x 1.2 mm 20 V/W 3.8 mm
Pyroelectric Infrared Detectors - Single and Dual Channel Detectors
Infrared Emitting Diode; GaAs; 2 Amp; T-1-3/4 package; RoHS
PILLGAALAS IFRARED EMITTING DIODE
LED, Infrared; GaAs; Pill Pack. PCB solder; 935mm wavelength; RoHS
Detector, PhotoDarlington; TO-46; NPN; 90/12 deg; 15 V (Min.); 1.1 V (Max.)
Phototransistor, 2 Elements, 18deg, BPX83
TO-46GAALAS IFRARED EMITTING DIODE
PIN Photodiode, 5mm, Half Angle 10deg
TCPT1350X01 Surface Mount Slotted Optical Switch, Transistor Output
BPX 38-3 80 IR+Visible Light Phototransistor, Through Hole 3-Pin TO-18 package
SMART-DUPLINE 44X44 PIR DETECTOR 90° REV.2
NPN Silicon phototransistor; lateral; fast response; Wide field of view
PILLGAALAS IFRARED EMITTING DIODE
LED PLASTIC T-1 WITH HIGH POWER LED CHIPBULK
Detector, PhotoDarlington; TO-46; NPN; 90 deg; 15 V; 1.1 V; 0.6 mA (Min.); 250
Diode, Infrared Emitter, T-1 Pkg, 15 Beam Angle, 20 mA Forward Current
SLOTTED OPTICAL SWITCH PHOTOLOGIC
Phototrans. array, 4 elem, +/-18deg, BPX 84
TO-46GAALAS IFRARED EMITTING DIODE
SENS OPTO SLOT 3.18MM TRANS THRU
SENS OPTO SLOT 3.18MM TRANS THRU
SENSOR PHOTOLOGIC HERMETIC TO-18
Opto SFH 213 FA IR Si Photodiode, 10 deg, Through Hole 5mm package
PLASTIC ENCAPSULATED CERAMIC PKG, TO-5
FO TO-46 DIODE IN SMA RECEPTACLE,
BPX 43-3/4 30 IR+Visible Light Phototransistor, Through Hole 3-Pin TO-18 package
PLCC-2 PKG.PHOTODIODEEPOXYCLEARREEL
DUP OPTICAL REPEATER OUTPUT
Photoconductive Cell; 20 Kilohms (Typ.); 500 Kilohms; 0.80 (Typ.); -40 degC
SD5421-002 IR Si Photodiode, 18 deg, Through-hole TO-46
NPN Silicon phototransistor; TO-106; ceramic; fast response; Wide field of view
PHOTOTRNSISTR NPN 935NM SIDELOOK
Sensor; Photo Transistors; Surface Mount Pkg; Glass Lens; 100 nA Dark Current
PILLGAALAS IFRARED EMITTING DIODE
LATERAL LED WITH POINT SOURCE 850 NM CHIP
Detector, PhotoDarlington; Pill Style Metal Can; NPN; 48 deg; 15 V; 1.1 V; 250