Emitters & Detectors
Photocell; 1500 Kilohms (Min.); 615 nm; 250 Vpeak (Max.); 500 mW @ 25 degC; TO
Silicon photodiode; hermetic TO-46; blue enhanced; very low dark current; narrow FOV
CNY70, Through Hole Reflective Optical Sensor, Phototransistor Output
Photodiode; 30 Series; 0.69 mA (Typ.); 0.45 V (Typ.); 0.05 muA (Typ.); -40 deg
Photoconductive Cell, Plastic Encapsulated, Ceramic Package, TO-18
TLMG1100-GS08 Green LED, 570 nm 1608 (0603), Rectangle Lens SMD package
TO-46, Flat Window GaAlAs IRED, 880nm
NPN Silicon phototransistor; TO-106; ceramic; fast response; Wide field of view
Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC
Blue silicon photodiode; 8mm substrate; IR blocking; 5.2mm; 330nm-720nm
SILICON PHOTO TRANSISTOR SENSOR
Infrared Emitter, GaAs Diode, 935 nm, 5.0 mW/cm2, TO-46
Photocell; 0.22 Megohms (Min.); 550 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-
Photoconductive Cell, Hermetically Sealed, TO-5
Photoconductive Cell, Hermetically Sealed, TO-18
880 nm IRED. T-1 ¾ (5mm); 20 mW output power; Narrow beam angle of ±10°
Photoconductive Cell; 1 Megohms (Min.); 0.85 (Typ.); 200 Vpeak (Max.); TO-8
Silicon photodiode; three lead TO-5 hermetic; flat window; UV enhanced; Wide FOV
Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC
Sensor; NPN; Slot Sensing Mode; Photomicro; 5 mm; Infrared Light; 5 to 24 VDC
OPB991L51Z Panel Mount Slotted Optical Switch, Transistor Output
OP505A IR Receiver, Through Hole, 3.18 (Dia.) x 5.84mm
Sensor, Transmissive, Chassis Mount, Plastic Package, Through Beam Module
Detector; TO-46; NPN; 6 deg; -40 degC; 100 degC; 0.5 in. (Min.); 0.018 in.
Sensor, Thin Compact, Slot, PMS, NPN
Photoconductive Cell; 150 Ohms (Typ.) @100 ftc; 560 Kilohms (Min.); 515 nm
panel mount hermetic, 5 meg ohms, max 100v
Quad element, ceiling mount pyroelectric detector
Planar silicon photodiode; two lead ceramic; high shunt resistance; blue response
BPV11F 30 deg IR Phototransistor, Through Hole 2-Pin 5mm (T-1 3/4) package
Photocell; 0.80 Megohms (Min.); 515 nm; 80 Vpeak (Max.); 50 mW @ 25 degC; TO-18
Photocell; 6.7 Megohms (Min.); 615 nm; 120 Vpeak (Max.); 200 mW @ 25 degC; TO-5
Photoconductive Cell, Hermetically Sealed, TO-18
Photo Diode, Planar; Clear Epoxy Dome Package; 55 muA (Typ.); 0.40 V (Typ.)
PLASTIC ENCAPSULATED CERAMIC PKG, TO-18
Photodiode; Case 22 Mini DIP; 70 muA (Typ.); 365 mV (Typ.); 30 nA (Max.); -20 d
Diffuse PE Sensor Maximum of 150 mm Detection Range, NPN Output, Block Style, IP69K
Sensor, Photomicro, Thin Compact Slot, Cable Termination, NPN, 5mm
Silicon photodiode; hermetic TO-8; flat window; blue; wide field of view
Silicon photodiode; ceramic; blue enhanced; very low dark current; wide FOV
Sensor; ZTP-115 Standard Infrared Sensor; Thermopile; IR Sensor
NPN Silicon phototransistor; T1; fast response; narrow field of view
Silicon photodiode; hermetic TO-46; fast response; dark current; wide field of view
Silicon photodiode; hermetic TO-46; flat window; IR blocking; blue; intermed. FOV
OP803SL Phototransistor, Through Hole 3-Pin TO-18 package
OPTOCOUPLER DC-IN 4-CH TRANS DC-OUT 16-PIN MINI-FLAT
SMD, NON-FOCUSED, MINI-REFLECTIVE IR SENSOR
Detector, Pyroelectric; Dual Element; 2sq-mm x 1 sq-mm; 4000 V/W (Typ.); 1%
Photocell; 20 M (Min.); 515 nm; 320 Vpeak (Max.); 125 mW @ 25 degC; TO-5; -60
Infrared Emitter, GaAs Diode, 890 nm, 3.0 mW/cm2, TO-18, TO-46
OP804SL IR Phototransistor, Through Hole 3-Pin TO-18 package
TCRT1000, Through Hole Reflective Optical Sensor, Phototransistor Output
CNY17F-3 DC Input Phototransistor Output Optocoupler, Through Hole, 6-Pin PDIP
Photocell; 20 M (Min.); 515 nm; 320 Vpeak (Max.); 125 mW @ 25 degC; TO-5; -60
Dual-Element Pyroelectric Detector, TO5housing - for motion sensing
Photoconductive Cell, Hermetically Sealed, TO-18
Photoconductive Cell, Plastic Encapsulated Ceramic Pkg, TO-18
Photoconductive Cell, Plastic Encapsulated Ceramic Pkg, TO-5
Sensor, Opto Switch, Transmissive, Single Channgel, 3.8mm, 30V, 20 mA
Infrared Transceivers SIR 115.2kbits Top View; IrDA
PHOTODARLINGTON SILICON NPN TO18
COMET, 6 PERFECT PROX, IR, DC, CABLE
SE Series GaAs Infrared Emitting Diode, Metal Can Coaxial Package
Diode, Infrared Emitter; T-1; 880 nm; 1.7 V; 50 mA; -40 degC; 85 degC; 70 mW;
Detector, Phototransistor; TO-18; NPN; 12 deg; 30 V; 0.4 V; 4 mA (Max.); 100 nA
OPB100-EZ OPB100 IR LED, Snap-In package
Photoconductive Cell, CdS ceramic open cell in a panel mount assembly
SMT refl Sensor w/LED Emitter, SFH9240
SMD Dual-Element Analog Pyroelectric Detector; DigiPyro; CLCC 5 mm housing
OP550A Visible Light Phototransistor, Through Hole 2-Pin Side-Looking package
THRU-BEAM DETECTOR CABLE VERSION, DC 100 FT
Infrared Emitter, GaAs Diode, 935 nm, 1.95 mW/cm2, T-1 3/4
SMD Dual-Element Digital Pyroelectric Detector; DigiPyro; CLCC 5 mm housing
Smart Pyroelectric Detector; Dual-Element; Smart DigiPyro; TO5 housing
PHOTO TRANSISTOR PLASTIC T-1
Infrared Emitter, GaAs Diode, 890 nm, 2.0 mW/cm2, TO-46
Detector; Optical Switch; Transmissive; Slotted; 30 mA; 30 V; 100mW; 890 nm
Phototransistor, Sidelooker, 35deg, LPT80A
AMBIENT LIGHT SENSOR PHOTOTRANSISTOR CHIP SILICON 570NM 2-PIN T-1 3/4
BPW34 IR + Visible Light Si Photodiode, 65 deg, Through-hole
5MM SLOT L/D-ON PNP NARROW MT
Sensor; ZTP-135SR Infrared Sensor; Thermopile; IR Sensor